论文类型：期刊论文
发表刊物：INTERNATIONAL JOURNAL OF MATERIALS RESEARCH
收录刊物：CPCI-S、SCIE
卷号：110
期号：5
页面范围：476-480
ISSN号：1862-5282
关键字：Electron beam melting; Silicon; Carbon; Redistribution; SiC
摘要：Electron beam melting was utilized to investigate the behavior of carbon flow by melting 100 g of multi-crystalline silicon in an electron beam furnace for five minutes. Carbon and nitrogen are the constituent impurities in contaminated Si samples with an average weight of 13% and 9%, respectively. The electron beam melting experiment caused redistribution of the impurities along the periphery and bottom of the Si sample with a pie-shaped structure. Investigations through scanning electron microscopy and energy dispersive X-ray spectroscopy confirmed that the impurities were silicon nitride and silicon carbide. It was determined that Si3N4 has a rod-shaped microstructure, whereas SiC has a granular morphology. By segregating the impurities redistributed through this technique, pure Si was obtained in the remaining sample.