论文名称：腐蚀时间对多孔硅层形貌及多晶硅性能的影响
发表刊物：机械工程材料
卷号：35
期号：9
页面范围：58
ISSN号：1000-3738
摘要：Porous silicon layer was prepared on the surface of polycrystalline
   silicon by chemical etching. The surface morphology, polycrystalline
   silicon minority carrier lifetime and resistivity of the porous silicon
   layers etched for different times were investigated after impurity
   removing by external gettering heat treatment. The results show that
   with the prolongation of etching time, the surface morphology of porous
   silicon layer was different, the pore diameter of the porous silicon got
   large gradually, the minority carrier lifetime and the resistivity were
   enhanced too. Some partial areas of porous silicon collapsed and the
   wall of holes turned thinner after etching for 14 min. The minority
   carrier lifetime and the resistivity of porous silicon reached 0.98mus
   and 0.16 Omega?cm respectively after etching 11 min and gettering
   treatment at 850 ℃.
备注：新增回溯数据
发表时间：2011-01-01