论文名称：多孔硅对单晶硅少子寿命影响状况的研究
论文类型：期刊论文
发表刊物：功能材料
所属单位：材料科学与工程学院
卷号：43
期号：3
页面范围：353-356
ISSN号：1001-9731
摘要：P-type monocrystalline silicon(mc-Si) was used as the starting
   material.Porous silicon(PS) layer was formed on the front surface
   of(mc-Si) silicon by chemical etching.We obtained the different porous
   silicon layers in the case of the different etching time,which was
   characterized by SEM,and tested the minority carrier lifetime by WT-2000
   mu-PCD.It was found that compared with the other samples,the surface
   morphology of porous silicon was best under the condition of etching
   11min in the same solution ratio,as well as the porosity was largest.We
   noticed a significant improvement for the minority carrier lifetime at
   850℃ for 150min.The improvement level of the minority carrier lifetime
   was different for the etching time.The sample of etching 11min was more
   efficient than other samples,up to 10%.It is well known that the porous
   silicon layer formation was accompanied by the appearance of elastic
   mechanical stress,which caused the elastic deformation in porous
   silicon/silicon interface.These interfaces were the favorable sites for
   defects and metallic impurities.In addition,PS had a crystalline
   structure like silicon substrate,but its crystal lattice parameters in
   surface direction exceeded them of initial crystalline silicon,which was
   beneficial to the migration for metallic impurities from the bulk to the
   PS layer.
备注：新增回溯数据
发表时间：2022-06-29