论文类型：期刊论文
发表刊物：ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING
收录刊物：SCIE
卷号：40
期号：1
页面范围：263-268
ISSN号：2193-567X
关键字：Semiconducting indium gallium nitride materials; I-V characteristics; Deep-level transient spectroscopy ( DLTS) of the material; Light-emitting diode
摘要：Indium gallium nitride (InGaN) has been characterized by means of deep-level transient spectroscopy (DLTS). The current-voltage measurement of respective schottky diode is performed by standard method available in our DLTS setup. The current-voltage measurement of InGaN is performed at various temperatures under same biasing conditions. From these measurements, the behavior of the materials is studied in detailed and listed in the following: The ideality factor, calculated to be 8.839, is found to increase with decreasing temperature of the material. However, values increased with decrease in temperature for the material. The higher value of ideality factor is attributed to high diffusion or tunneling current. The barrier height of InGaN is calculated as 0.851 eV which decreased with decrease in temperature. The change in the barrier height is related to the effective leakage current at high temperature. In InGaN, the value of reverse saturation current at room temperature is calculated as 8.22 x 10(-11) A, and the calculated values are found to decrease at lower temperatures.