location: Current position: Home >> Scientific Research >> Paper Publications

Effect of Si doping on photoelectrocatalytic decomposition of phenol of BiVO4 film under visible light

Hits:

Indexed by:期刊论文

Date of Publication:2010-05-15

Journal:JOURNAL OF HAZARDOUS MATERIALS

Included Journals:SCIE、EI、PubMed

Volume:177

Issue:1-3

Page Number:914-917

ISSN No.:0304-3894

Key Words:Thin films; Visible light; BiVO4; Surface hydrophilicity

Abstract:The silicon-doped BiVO4 film was fabricated by modified metalorganic decomposition (MOD) method. XRD analysis indicated that the crystal size of the BiVO4 film was decreased from 32.4 nm to 23.9 nm by doping Si. The measurements of FT-IR spectra and the water contact angle showed that doping Si could elevate the surface hydrophilicity of the BiVO4 film. The phenol elimination rate on the Si-doped BiVO4 film electrode in the photoelectrocatalytic process was 1.84 times as great as that on the BiVO4 film electrode. The enhanced photoelectrocatalytic performance was attributed to the decrease of the crystalline size and the enhancement of the hydrophilic performance. (C) 2010 Elsevier B.V. All rights reserved.

Pre One:A Structured Macroporous Silicon/Graphene Heterojunction for Efficient Photoconversion

Next One:加热和亚铁离子活化过硫酸钠氧化降解4-CP的研究