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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-07-15

发表刊物：APPLIED SURFACE SCIENCE

收录刊物：EI、SCIE

卷号：258

期号：19

页面范围：7465-7469

ISSN号：0169-4332

关键字：CuInS2; Thin films; SILAR preparation; Hydrothermal annealing

摘要：CuInS2 thin films have been deposited by successive ionic layer absorption and reaction (SILAR) method, then annealed in a Na2S solution (denoted as hydrothermal annealing) at 200 degrees C for different time. The effect of hydrothermal annealing on the properties of the films was studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and optical absorption spectroscopy. The XRD, TEM and SEM results indicate that well-crystallized CuInS2 films could be obtained after annealing in 0.1 mol/L Na2S solution for 1.5 h. The annealed CuInS2 films were slightly S-rich and the direct band gap varied from 1.32 to 1.58 eV as the annealing time increased from 0.5 h to 2 h. (C) 2012 Elsevier B.V. All rights reserved.