Hits:

Indexed by:会议论文

Date of Publication:2011-01-01

Included Journals:CPCI-S

Page Number:1009-1011

Key Words:ZnO; Photoluminescence; annealing; buffer layer

Abstract:ZnO thin films with ZnO homo-buffer layer were grown on Si (111) substrates by PLD. The buffer layers, about 15 nm thick, were deposited at 300 degrees C,400 degrees C and 500 degrees C, respectively, under a base pressure of 1x10(-3) Pa. The main ZnO layers (about 400nm thick) were grown at 650 degrees C for 90 min in an oxygen ambience of 60 Pa. All the films were annealed at 500 degrees C for 20 min in an oxygen ambience of 105 Pa. PL spectra show that the PL peak intensity of the ZnO film with a homo-buffer layer gown at 300 degrees C was strongest after annealing. It means that the combination of growing homo-buffer layer at a suitable low temperature and employing appropriate post-anneal treatment is an effective method to improve the optical feature of ZnO thin film grown by PLD.