Release Time:2019-03-11  Hits:

Indexed by: Journal Article

Date of Publication: 2018-01-01

Journal: RSC ADVANCES

Included Journals: EI、SCIE

Volume: 8

Issue: 12

Page Number: 6341-6345

ISSN: 2046-2069

Abstract: A Schottky barrier diode (SBD) solar-blind photodetector was fabricated based on the single crystal beta-Ga2O3. Cu and Ti/Au were deposited on the top and bottom surface of Ga2O3 as Schottky and ohmic contacts, respectively. The SBD exhibits a higher rectification ratio of up to 5 x 10(7) at +/- 2 V. The photoresponse spectra show a maximum responsivity at 241 nm and a cutoff wavelength of 256 nm. The solar-blind/ultraviolet and solar-blind/visible rejection ratio can reach a high level of up to 200 and 1000, respectively. It is interesting that the device has a clear response to the solar-blind wavelength at zero bias, which confirms it can be used as a self-powered solar-blind photodetector.