Hits:

Indexed by:期刊论文

Date of Publication:2015-01-15

Journal:APPLIED SURFACE SCIENCE

Included Journals:SCIE、EI

Volume:325

Issue:C

Page Number:258-261

ISSN No.:0169-4332

Key Words:beta-Ga2O3 film; Growth pressure; Preferred orientation; MOCVD

Abstract:The beta-Ga2O3 films were grown on GaAs (1 0 0) substrates by metal-organic chemical vapor deposition method. The influences of growth pressure on the surface morphology, crystal quality and electrical properties of beta-Ga2O3 films were investigated using FE-SEM, XRD and leakage current measurements. It was found that the growth pressure could obviously influence the preferred orientation and growth rate of the beta-Ga2O3 films prepared from 2000 Pa to 10,000 Pa. At the growth pressure of 5000 Pa, we obtained beta-Ga2O3 film with relatively high resistance. According to the XRD phi-scan results, the in-plane epitaxial relationship could be confirmed as beta-Ga2O3 [0 1 0]vertical bar vertical bar GaAs (0 1 1) and beta-Ga2O3 [0 0 1]vertical bar vertical bar 11GaAs (011 In addition, the effect of growth pressure on the parasitic gas-phase reaction was studied to explain the changes of growth rate. (C) 2014 Elsevier B.V. All rights reserved.