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Indexed by:期刊论文
Date of Publication:2014-11-01
Journal:MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Included Journals:SCIE、EI
Volume:27
Page Number:841-845
ISSN No.:1369-8001
Key Words:Distributed Bragg reflectors; Silicon carbide; Ultraviolet; Metal-organic chemical vapor deposition
Abstract:Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6E-SiC substrates by metal-organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiNx interlayer was introduced between the first pair of AlGaN/GaN DBR layers. Using this approach, crack-free 30-pair Al0.2Ga0.8N/GaN DBRs were obtained with peak reflectivity of 92.8% at 388 nm and a stop-band bandwidth of 16 nm. Our results reveal that a SiNx interlayer not only decreased the tensile strain but also improved the reflectivity via suppression of cracks. (C) 2014 Elsevier Ltd. All rights reserved.
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