Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal-organic chemical vapor deposition
Release Time:2019-03-09 Hits:
Indexed by: Journal Article
Date of Publication: 2014-11-01
Journal: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Included Journals: EI、SCIE
Volume: 27
Page Number: 841-845
ISSN: 1369-8001
Key Words: Distributed Bragg reflectors; Silicon carbide; Ultraviolet; Metal-organic chemical vapor deposition
Abstract: Crack-free AlGaN/GaN distributed Bragg reflectors (DBRs) for the near-UV region were grown on 6E-SiC substrates by metal-organic chemical vapor deposition (MOCVD). To suppress the generation of cracks, a thin SiNx interlayer was introduced between the first pair of AlGaN/GaN DBR layers. Using this approach, crack-free 30-pair Al0.2Ga0.8N/GaN DBRs were obtained with peak reflectivity of 92.8% at 388 nm and a stop-band bandwidth of 16 nm. Our results reveal that a SiNx interlayer not only decreased the tensile strain but also improved the reflectivity via suppression of cracks. (C) 2014 Elsevier Ltd. All rights reserved.
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