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Indexed by:期刊论文

Date of Publication:2014-06-01

Journal:JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION

Included Journals:SCIE、EI、ISTIC

Volume:29

Issue:3

Page Number:428-432

ISSN No.:1000-2413

Key Words:ZnO; graphite; photoluminescence; transferable devices

Abstract:ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn(CH3COO)(2)center dot 2H(2)O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet (UV) emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin films could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with sufficient power durability.