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Indexed by:期刊论文
Date of Publication:2008-09-01
Journal:CHINESE PHYSICS LETTERS
Included Journals:SCIE、ISTIC、Scopus
Volume:25
Issue:9
Page Number:3400-3402
ISSN No.:0256-307X
Abstract:The N-Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N- monodoped ZnO films, and the N- Ag codoped low-resistivity p-type ZnO films with the resistivity of 1.05 Omega.cm, relatively high carrier concentration of 5.43 x 10(17) cm(-3), and Hall mobility of 10.09 cm(2) V-1 s(-1) are obtained under optimized conditions. This achievement confirms that p-type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.
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