location: Current position: Home >> Scientific Research >> Paper Publications

ZnO微米刺球的CVD法生长及其在压电应力传感器中的应用

Hits:

Indexed by:期刊论文

Date of Publication:2013-09-15

Journal:人工晶体学报

Included Journals:EI、PKU、ISTIC、CSCD、Scopus

Volume:42

Issue:9

Page Number:1746-1749

ISSN No.:1000-985X

Key Words:氧化锌;微米刺球;化学气相沉积;压电应力传感器;开关比

Abstract:利用化学气相沉积(CVD)方法生长出一种新颖的氧化锌(ZnO)微米刺球状结构,并使用该结构制备出一种新型压电应力传感器件.使用半导体特性分析系统(Keithley 4200)对器件特性进行测试,结果表明该种器件对所施加的应力高度敏感,开关比高达约60,比目前多数ZnO基压电应力传感器件高出数倍,在应力检测和机电开关等领域有很好的应用前景.

Pre One:Platinum nanoparticle decorated silicon nanowire arrays for photoelectrochemical hydrogen production

Next One:Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates