Hits:

Indexed by:期刊论文

Date of Publication:2017-04-05

Journal:ACS APPLIED MATERIALS & INTERFACES

Included Journals:SCIE、EI、PubMed

Volume:9

Issue:13

Page Number:12013-12020

ISSN No.:1944-8244

Key Words:monolayer group-IV monochalcogenides; oxidation resistance; activation energy; band gap; effective mass

Abstract:Ridged, orthorhombic two-dimensional (2D) group -V elemental and group IV -VI compound analogues of phosphorene provide a versatile platform for nanoelectronics, optoelectronics, and clean energy. However, phosphorene is vulnerable to oxygen in ambient air, which is a major obstacle for its application. Regarding this issue, here we explore the oxidation behavior of monolayer group -IV monochalcogenides, (GeS, GeSe,- SnS, and SnSe), in comparison to that of phosphorene and, arsenene by first -principles calculations: We find superior- oxidation resistance of the monolayer group -IV monochalcogenicles -with activation energies for- the :,chemisorption of O-2 on the 2D sheets in the range of 1.26-1.60 eV, about twice of the values of phosphorene and arsenene. The distinct oxidation behaviors of monolayer group-IV monochalcogenides and group-V phosphorene analogues originate from their different bond natures. Moreover, the chemisorption of modetate amount of oxygen atoms does not severely deteriorate the electronic band structures of the monolayer group-IV monochalcogenides. These results shine light on the utilization of the monolayer group-IV monochalcogenides for next-generation 2D electronics and optoelectronics with high performance and stability.