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Indexed by:期刊论文

Date of Publication:2013-11-18

Journal:APPLIED PHYSICS LETTERS

Included Journals:SCIE、EI、Scopus

Volume:103

Issue:21

ISSN No.:0003-6951

Abstract:The oxidation processes of stepped SiC(0001) surfaces are studied within the ab initio atomistic thermodynamics approach. Our calculations show that a one-dimensional -Si-O-chain structure as a precursor for oxide growth on stepped SiC surfaces is formed along the step edge, promoting further oxidation of the step edges. Following the modified Deal-Grove oxidation model, we also find that the oxidation rate at steps is higher than that at terraces by three orders of magnitude. These findings give a reasonable explanation for the oxide thickness fluctuation between the step and the terrace observed in the previous experiments. (C) 2013 AIP Publishing LLC.