Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-11-18

Journal: APPLIED PHYSICS LETTERS

Included Journals: Scopus、EI、SCIE

Volume: 103

Issue: 21

ISSN: 0003-6951

Abstract: The oxidation processes of stepped SiC(0001) surfaces are studied within the ab initio atomistic thermodynamics approach. Our calculations show that a one-dimensional -Si-O-chain structure as a precursor for oxide growth on stepped SiC surfaces is formed along the step edge, promoting further oxidation of the step edges. Following the modified Deal-Grove oxidation model, we also find that the oxidation rate at steps is higher than that at terraces by three orders of magnitude. These findings give a reasonable explanation for the oxide thickness fluctuation between the step and the terrace observed in the previous experiments. (C) 2013 AIP Publishing LLC.