Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2013-01-01

Journal: NANO LETTERS

Included Journals: Scopus、EI、SCIE

Volume: 13

Issue: 1

Page Number: 85-90

ISSN: 1530-6984

Key Words: Pseudobinary system; solid-solution nanowires; synthesis; lattice matching; structure homology

Abstract: Pseudobinary solid-solution semiconductor nanowires made of (GaP)(1-x)(ZnS)(x), (ZnS)(1-x)(GaP)(x) and (GaN)(1-x)(ZnO)(x) were synthesized based on an elaborative compositional, structural, and synthetic designs. Using analytical high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS), we confirmed that the structure uniformity and a lattice match between the two constituting binary components play the key roles in the formation of quaternary solid-solution nanostructures. Electrical transport measurements on individual GaP and (GaP)(1-x)(ZnS)(x) nanowires indicated that a slight invasion of ZnS in the GaP host could lead to the abrupt resistance increase, resulting in the semiconductor-to-insulator transition. The method proposed here may be extended to the rational synthesis of many other multicomponent nanosystems with tunable and intriguing optoelectronic properties for specific applications.