Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2010-05-15

Journal: PHYSICA B-CONDENSED MATTER

Included Journals: Scopus、EI、SCIE

Volume: 405

Issue: 10

Page Number: 2481-2484

ISSN: 0921-4526

Key Words: Amorphous semiconductor; Coordination number; Density of states; Modification phenomenon

Abstract: The model for amorphous semiconductor InSb (a-InSb) was constructed through the first principles calculations, based on the idea of "continuous random networks" (CRN). The results of structural parameters for a-InSb are in agreement with the available data both theoretically and experimentally. The structure of a-InSb is almost tetrahedrally bonded with a perfect average coordination number of four. Due to the influence of the disorders, the density of states for a-InSb has the smearing structure in contrast to crystalline InSb (c-InSb). As a consequence of the induction of disorders, modification phenomena occur at the band edge of a-InSb in contrast to that of c-InSb. (C) 2010 Elsevier B.V. All rights reserved.