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论文类型：期刊论文

发表时间：2019-05-29

发表刊物：MICRO & NANO LETTERS

收录刊物：SCIE、EI

卷号：14

期号：6

页面范围：694-697

ISSN号：1750-0443

关键字：photoresists; viscosity; etching; negative photoresist scum; low viscosity positive photoresist; AZ703; double-layer resist method; optimal retracting distance; bottom layer resist; top layer resist; top layer contact; size 8; 0 mum; size 1; 10 mum

摘要：A novel double-layer resist method was presented in this work to decrease the negative photoresist scum. Positive photoresist was chosen as the bottom layer resist and negative photoresist as the top layer resist. This work studied the effect of viscosity and thickness of bottom layer resist on the mean number of scum. The experiment shows that the low viscosity positive photoresist AZ703, with the spin speed of 3000 r/min and the thickness of 1.10 um, had prominent effect on the removal of photoresist. To minimise the area of the top layer contact with substrate and further reduce the scum, 8 mu m was selected as the optimal retracting distance d of the bottom layer resist.