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Indexed by:期刊论文

Date of Publication:2008-08-30

Journal:6th Asian-European International Conference on Plasma Surface Engineering

Included Journals:SCIE、EI、CPCI-S、Scopus

Volume:202

Issue:22-23

Page Number:5410-5415

ISSN No.:0257-8972

Key Words:ZnO film; Annealing behavior; Coarsening; Diffusion mechanism

Abstract:Using reactive radio frequency magnetron sputtering, ZnO films were deposited on Si (001) substrate at room temperature and were annealed at different temperatures ranging from 300 to 1000 degrees C in air. Tire annealing behavior has been studied by analyzing morphological and structural evolution of ZnO films quantitatively. A coarsening transition is found occurring at a temperature of about 790 degrees C. For the annealed films above and below the temperature, the diffusion mechanisms of oxygen vacancies and zinc interstitials are assigned to be responsible for the coarsening behaviors, respectively. (C) 2008 Elsevier B.V. All rights reserved.