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Indexed by:期刊论文

Date of Publication:2016-10-01

Journal:JOURNAL OF LUMINESCENCE

Included Journals:SCIE、EI、Scopus

Volume:178

Page Number:192-195

ISSN No.:0022-2313

Key Words:ZnO; Near-band-edge photoluminescence; Localized states in band tail

Abstract:Highly epitaxial ZnO films deposited on c-plane sapphire substrate by pulsed laser deposition exhibited enhanced extraordinary spectral features in the near-band-edge region, which were studied in comparison with the annealed sample and the bulk ZnO crystal. Based on the characterization in structure and photoluminescence, the near-band-edge emission was assigned to the tail-state luminescence due to the exciton localization, which is different from the bound excitons, instead has the continuous density of states at the deeper levels, probably created by the defects, chemical disorders, and the lattice strains. (C) 2016 Elsevier B.V. All rights reserved.