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Indexed by:期刊论文

Date of Publication:2004-12-01

Journal:Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology

Included Journals:EI

Volume:24

Issue:SUPPL.

Page Number:28-32

ISSN No.:02539748

Abstract:Latest development of gate materials with high dielectric constant was tentatively reviewed with discussion centered on various materials processing technologies, the technical limitations, its applications in fabrication of integrated circuits with sub-micron feature size, and its development trends in a thought provoking way.