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Indexed by:期刊论文

Date of Publication:2008-04-01

Journal:PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Included Journals:SCIE、EI

Volume:205

Issue:4

Page Number:961-964

ISSN No.:1862-6300

Abstract:An on-line measurement of optical emission spectrum (OES) was used to study the variation of Zn and o components in the plasma of ZnO film growth with reactive radio-frequency magnetron sputtering method. It was found that the decline of all the Zn emission lines shows three different stages with the increase of oxygen partial pressure (P-O), corresponding to metal sputtering (P-O < 6.0 x 10(-3) Pa), the compound sputtering (P-O > 5.0 x 10(-2) Pa), and the transition range (6.0 x 10(-3) Pa to 5.0 x 10-2 Pa), respectively. In the stage of compound sputtering, a critical oxygen pressure is found at about 1.5 x 10(-1) Pa. At the oxygen pressures below and above the critical pressure, the film growth is found to be O-controlled and Zn-controlled, respectively. Similarly, a critical substrate temperature is found at about 550 degrees C. At the temperatures above the critical temperature, the variation of Zn-472.6 intensity is more obvious, suggesting the deposited films is more close to the stoichiometric ratio than the films deposited at the lower temperatures. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.