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论文类型：期刊论文

发表时间：2011-05-28

发表刊物：PHYSICAL CHEMISTRY CHEMICAL PHYSICS

收录刊物：SCIE、PubMed、Scopus

卷号：13

期号：20

页面范围：9432-9438

ISSN号：1463-9076

摘要：Silica supported CoSi particles were synthesized by metal organic chemical vapor deposition of the Co(SiCl3)(CO)(4) precursor carried in hydrogen at atmospheric pressure and moderate temperature in a fluidized bed reactor. In contrast, CoCl2 supported on silica was formed by using argon as the carrier gas. The samples were characterized by X-ray diffraction, transmission electron microscopy, ultraviolet-visible spectroscopy, and thermogravimetric/differential thermogravimetric analysis. The precursor Co(SiCl3)(CO)(4) reacted with the hydroxyl groups of amorphous silica via loss of HCl and introduced cobalt species onto the surface. The decomposition mechanism of the supported precursor on silica was investigated by in situ Fourier transform infrared spectroscopy from room temperature to 300 degrees C in a hydrogen or argon atmosphere. The results showed that CO and HCl elimination occurred in a hydrogen atmosphere, while only CO elimination occurred in Ar. All of the results showed that it was possible to prepare supported CoSi at lower temperatures via changing the carrier gas.