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第一作者：申宁

通讯作者：余隽,唐祯安

发表时间：2022-10-10

发表刊物：传感技术学报

期号：6

页面范围：725-729

ISSN号：1004-1699

摘要：This paper introduces the implementation of a low-cost 4 × 4 uncooled infrared tungsten microbolometer array integrated chip in a standard 0. 5 μm CMOS technology and micromachining processes. Each tungsten mi-crobolometer in the array consists of a micro-bridge structure and a Tungsten thermistor. CMOS readout circuit is in-tegrated under the array. The micro-bridge structure can be created by etching the surface sacrificial layer after the CMOS fabrication,without any additional lithography procedure. The microbolometer has a size of 100μm×100μm and a fill factor of 20%. Measurements show the effective thermal conductance of 1. 31×10-4 W/K,the thermal time constant of 1. 33 ms and the effective thermal mass of 1. 74 ×10-7 J/K in vacuum environment. The responsivity of the microbolometer is about 1. 91×104 V/W at 10 Hz and the calculated detectivity is 1. 88×107 cm·Hz1/2/W.

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