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论文类型：期刊论文

第一作者：Li, Ying

通讯作者：Li, Y (reprint author), Dalian Univ Technol, Coll Elect Sci & Technol, Dalian 116024, Peoples R China.

合写作者：Yu, Jun,Wu, Hao,Tang, Zhenan

发表时间：2014-03-01

发表刊物：AIP ADVANCES

收录刊物：SCIE、EI、Scopus

卷号：4

期号：3

ISSN号：2158-3226

摘要：A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of similar to 19 mW and a rapid thermal response of 8 ms for heating up to 300 degrees C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 degrees C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9 parts per thousand/degrees C. (C) 2014 Author(s).