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发布时间：2019-03-09

论文类型：期刊论文

发表时间：2012-03-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：Scopus、ISTIC、SCIE

卷号：29

期号：3

ISSN号：0256-307X

摘要：We report on the design, fabrication, and characterization of a micro plane-plane geometry CMOS device, which has a heat emitter and a heat receiver, capable of studying the near-field radiative heat transfer at a 550 nm gap. Under high vacuum conditions, the heat emitter is heated by supplying driving currents and heated again after removing the heat receiver. The heating power difference between the two kinds of heating experiments indicates the existence of a proximity effect in the heat transfer between the emitter and the receiver. Our experiments pave the way towards overcoming the construction difficulty of plane-plane geometry with a nanometer gap.