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论文类型：期刊论文

第一作者：Bai, Suyuan

通讯作者：Bai, SY (reprint author), Dalian Univ Technol, Sch Elect & Informat Engn, Dept Elect Engn, Dalian 116024, Peoples R China.

合写作者：Tang, Zhenan,Huang, Zhengxing,Yu, Jun

发表时间：2009-08-01

发表刊物：IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

收录刊物：SCIE、EI

卷号：56

期号：8

页面范围：3238-3243

ISSN号：0278-0046

关键字：Genetic algorithms (GAs); interfacial thermal resistance (ITR); thermal conductivity (TC); transient thermoreflectance technique

摘要：In this paper, we measure the thermal conductivities (TCs) of Si3N4 thin films prepared by lower pressure chemical vapor deposition with thickness ranging from 37 to 200 nm. The measurements were made at room temperature using a transient thermoreflectance technique. A three-layer model based on the transmission-line theory and the genetic algorithms were applied to obtain the TC of thin films and the interfacial thermal resistance (ITR). The results show that the value of the TC is 1.24-2.09 W . m(-1) . K-1. The ITR between the metal layer and the thin film is about 1.2 x 10(-8) m(2) . K . W-1. The estimated uncertainty of the TC is less than 18%.