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发布时间：2019-03-10

论文类型：期刊论文

发表时间：2008-02-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：ISTIC、SCIE

卷号：25

期号：2

页面范围：593-596

ISSN号：0256-307X

摘要：Thermal conductivity of submicron-thick aluminium oxide thin Elms prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique. A three-layer model based on transmission line theory and the genetic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interfacial thermal resistance. The results show that the average thermal conductivity of 330-1000 nm aluminium oxide thin films is 3.3 Wm(-1)K(-1) at room temperature. No significant thickness dependence is found. The uncertainty of the measurement is less than 10%.