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气压及偏压对磁控溅射TaN薄膜力学性能影响

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Indexed by:期刊论文

Date of Publication:2013-01-15

Journal:真空科学与技术学报

Included Journals:EI、PKU、ISTIC、CSCD、Scopus

Volume:33

Issue:1

Page Number:54-60

ISSN No.:1672-7126

Key Words:反应磁控溅射;TaN薄膜;气压;偏压;力学性能

Abstract:采用电子回旋共振增强磁控溅射在不锈钢基体上制备六方相TaN薄膜,并研究了气压及偏压对TaN薄膜结构、力学性能的影响.利用X射线衍射、扫描电镜、原子力显微镜分析薄膜化学结构及形貌,利用纳米压痕、划痕实验仪对薄膜力学性能进行测定.研究表明,制备气压上升影响六方TaN相择优取向,气压、Ar/N2流量比及偏压改变对TaN薄膜力学性能有较大影响.实验证明在1.1×10-1 pa,偏压100 V下制备的TaN薄膜具有最高硬度32.4 GPa,最高结合力极限载荷27N.

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