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一种镧系氧化物栅氧浅沟槽结构

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First Author:juxuexuan

Disigner of the Invention:jinxiumei,TANG

Application Number:CN201220083656.0

Authorization Date:2012-03-07

Authorization number:CN202523716U

Pre One:一种镧系氧化物栅氧浅沟槽结构
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