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论文类型：期刊论文

发表时间：2017-12-01

发表刊物：TRIBOLOGY LETTERS

收录刊物：SCIE、EI

卷号：65

期号：4

ISSN号：1023-8883

关键字：Silicon; Nanoscale; Wear; Transmission electron microscopy; Grinding

摘要：Two types of diamond wheel with a mesh size of 20,000 are developed. A novel approach for mechanical chemical grinding (MCG) is proposed using the diamond wheels developed. A wear layer of 56 nm in thickness is obtained on a silicon wafer, which is ground by the diamond wheel with ceria at a feed rate of 20 mu m/min. It consists of an amorphous layer at the top and a damage crystalline layer beneath. The thickness of the wear layer is less than one third those ground using a conventional diamond wheel with a mesh size of 3000. Surface roughness Ra and peak-to-valley values keep basically constant at 1 and 9.8 nm, respectively, with increasing feed rates from 5 to 20 mu m/min, which is ground by the diamond wheel with ceria. Nanoscale wear layers are obtained on Si wafers ground by MCG in high efficiency, which is different from the traditional diamond grinding with thick wear layers and chemical mechanical grinding with low efficiency. The ground Si wafers are bright and absent of cracks. MCG paves the way for the applications in semiconductor and electronics industries.