点击次数：

论文类型：期刊论文

发表时间：2014-02-01

发表刊物：SCRIPTA MATERIALIA

收录刊物：SCIE、EI、Scopus

卷号：72-73

页面范围：39-42

ISSN号：1359-6462

关键字：Nanotwinned semiconductor; Molecular dynamics; CdTe; Indentation; Twin thickness

摘要：By varying the twin thickness from 4 to 23 nm, a maximum of hardness is achieved by molecular dynamics simulations at a twin thickness of 16 nm. When the twin thickness is >16 nm, the hardness is consistent with the Hall-Petch effect, whereas the hardness of a twin <= 16 nm thick is in a good agreement with the reverse Hall Petch effect. This is attributed to a transformation of the synergistic effect between both twin boundaries from monotonically increasing to decreasing with increasing twin thickness. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.