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Indexed by:期刊论文

Date of Publication:2018-11-01

Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Included Journals:SCIE、Scopus

Volume:29

Issue:21

Page Number:18668-18673

ISSN No.:0957-4522

Key Words:Cerium; Crystalline materials; Ferroelectric films; Microstructure; Perovskite; Scanning electron microscopy; Semiconductor doping; Sols, Annealing process; Cerium doping; Cerium-doped; Crystalline orientations; Dielectric and ferroelectric properties; Gel process; Perovskite structures; Remnant polarizations, Thin films

Abstract:Pb1.2-xCexZr0.52Ti0.48O3 (PCZT, x=0%, 0.1%, 0.5%, 1%, 2% and 3%) thin films with the thickness of about 1 mu m were fabricated by sol-gel process and traditional annealing process on Pt/Ti/SiO2/Si substrates to investigate the effect of cerium doping on crystalline orientation, microstructure and electric properties of the samples. (100)-oriented Pb1.2-xCexZr0.52Ti0.48O3 films were obtained for all x values. The results of Scanning electron microscopy (SEM) revealed that the 0%, 0.1%, 0.5%, and 1% cerium doped Pb1.2-xCexZr0.52Ti0.48O3 films have a dense columnar perovskite structure. The maximum dielectric constant and remnant polarization were obtained for 0.1% Ce-doped film.