Release Time:2019-03-13  Hits:

Indexed by: Journal Article

Date of Publication: 2016-05-01

Journal: JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS

Included Journals: Scopus、SCIE

Volume: 67

Issue: 3

Page Number: 212-216

ISSN: 1335-3632

Key Words: dry etching; plasma; SU-8 photoresist; etching rate

Abstract: Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O-2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O-2 mixture contains about 5% CF4 by volume, the etching rate can be reached at 5.2 mu m/min.