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Indexed by:期刊论文

Date of Publication:2016-05-01

Journal:JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS

Included Journals:SCIE、Scopus

Volume:67

Issue:3

Page Number:212-216

ISSN No.:1335-3632

Key Words:dry etching; plasma; SU-8 photoresist; etching rate

Abstract:Photo sensitive polymer SU-8, owing to its excellent mechanical properties and dielectric properties on polymerization, is widely used in MEMS device fabrications. However, the removing, stripping or re-patterning of the cross-linked SU-8 is a difficult issue. In this paper, CF4/O-2 gas mixture provided by a plasma asher equipment was used for the patterning of cross-linked SU-8 material. The RF power, the temperature of the substrate holder, chamber pressure and gas concentration were optimized for the cross-linked SU-8 etching process. When the CF4/O-2 mixture contains about 5% CF4 by volume, the etching rate can be reached at 5.2 mu m/min.