Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2010-12-01

Journal: JOURNAL OF LUMINESCENCE

Included Journals: Scopus、EI、SCIE

Volume: 130

Issue: 12

Page Number: 2293-2297

ISSN: 0022-2313

Key Words: ErF3; Near infrared; Electroluminescence

Abstract: Near-infrared (NIR) organic light-emitting devices (OLEDs) are demonstrated by employing erbium fluoride (ErF3)-doped tris-(8-hydroxyquinoline) aluminum (Alq(3)) as the emitting layer. The device structure is ITO/N,N'-di-1-naphthyl-N,N'-diphenylbenzidine (NPB)/Alq(3): ErF3/2,2',2 ''-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole) (TPBI)/Alq(3)/Al. Room-temperature electroluminescence around 1530 nm is observed due to the I-4(13/2)-I-4(15/2) transition of Er3+ Full width at half maximum (FWHM) of the electroluminescent (EL) spectrum is similar to 50 nm. NIR EL intensity from the ErF3-based device is similar to 4 times higher than that of Er(DBM)(3)Phen-based device at the same current. Alq(3)-ErF3 composite films are investigated by the measurements of X-ray diffraction (XRD), absorption, photoluminescence (PL) and PL decay time. Electron-only devices are also fabricated. The results indicate that energy transfer mechanism and charge trapping mechanism coexist in the NIR EL process. (C) 2010 Elsevier B.V. All rights reserved.