Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2009-11-25

Journal: CHEMICAL RESEARCH IN CHINESE UNIVERSITIES

Included Journals: Scopus、ISTIC、SCIE

Volume: 25

Issue: 6

Page Number: 786-790

ISSN: 1005-9040

Key Words: Transparent electrode; Near-infrared(NIR); Organic light-emitting diode(OLED)

Abstract: The optical transmission(200-2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Omega/square), ITO(12 Omega/square), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 mu m based on Er(DBM)(3)Phen with ITO(100 Omega/square), ITO(12 Omega/square) and PANI as anodes, respectively, were fabricated. The device structure was anode/4 ''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/N,N'-di-1-naphthyl-N,N'-diphenylbenzidine(NPB)/Er(DBM)(3)Phen/tris-(8-hydroxyquinoline) aluminum(Alq(3))/Al. The results suggest that the performance of NIR-OLEDs with ITO(100 Omega/square), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Omega/square) and PANI as anodes, respectively. The high NIR transmittance of ITO(100 Omega/square) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Omega/square) are another reasons.