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论文类型：期刊论文

发表时间：2009-11-25

发表刊物：CHEMICAL RESEARCH IN CHINESE UNIVERSITIES

收录刊物：SCIE、ISTIC、Scopus

卷号：25

期号：6

页面范围：786-790

ISSN号：1005-9040

关键字：Transparent electrode; Near-infrared(NIR); Organic light-emitting diode(OLED)

摘要：The optical transmission(200-2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Omega/square), ITO(12 Omega/square), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 mu m based on Er(DBM)(3)Phen with ITO(100 Omega/square), ITO(12 Omega/square) and PANI as anodes, respectively, were fabricated. The device structure was anode/4 ''-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/N,N'-di-1-naphthyl-N,N'-diphenylbenzidine(NPB)/Er(DBM)(3)Phen/tris-(8-hydroxyquinoline) aluminum(Alq(3))/Al. The results suggest that the performance of NIR-OLEDs with ITO(100 Omega/square), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Omega/square) and PANI as anodes, respectively. The high NIR transmittance of ITO(100 Omega/square) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Omega/square) are another reasons.