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论文类型：期刊论文

发表时间：2008-06-01

发表刊物：CHINESE PHYSICS LETTERS

收录刊物：SCIE、ISTIC、CSCD

卷号：25

期号：6

页面范围：2261-2264

ISSN号：0256-307X

摘要：Organic light emitting diodes are fabricated based on metal-free phthalocyanine (H(2)Pc) doped into tris-(8-hydroxyquinoline) aluminium (Alq(3)). The device structure is ITO/NPB (30nm)/Alq(3): H(2)Pc(30 nm)/BCP(20 nm) /Alq(3)(20 nm)/Al. In the light-emitting layers, H(2)Pc concentrations are varied from 0 wt% to 100 wt%. The emissions around 708nm and 800nm appear at low concentrations, while the emissions around 910nm and 930nm appear at high concentrations. The emissions around 708nm and 800nm are from H(2)Pc monomers. The emissions around 910nm and 930nm are from H(2)Pc aggregates. The dominant mechanism in the doped devices is direct charge trapping.