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论文类型：期刊论文

发表时间：2008-03-01

发表刊物：JOURNAL OF NON-CRYSTALLINE SOLIDS

收录刊物：SCIE

卷号：354

期号：14

页面范围：1516-1521

ISSN号：0022-3093

关键字：thin-film transistors; polymers and organics

摘要：Copper phthalocyanine (CuPc) thin-film transistors (TFTs) have been fabricated using spin-coated polymeric gate insulators, including polymethyl methacrylate (PMMA) and a novel poly(methylmethacrylate-co-glycidylmethacrylate) (P(MMA-co-GMA)). These devices behaved fairly well and showed satisfactory p-type electrical characteristics. The transistor with P(MMA-co-GMA) gate insulator showed higher field-effect mobility, mu(FET) = 1.22 x 10(-2) cm(2)/V s, larger on/off current ratio, I-on/I-off = 7 x 10(3) and lower threshold voltage, V-T = -8 V, compared with the transistor with PMMA gate insulator (mu(FET) = 5.89 x 10(-3) cm(2)/V s, I-on/I-off = 2 x 10(3) and V-T = - 15 V). The higher mobility of CuPc on P(MMA-co-GMA) was attributed to better ordering and enhanced crystallinity within the CuPc film and the better CuPc/P(MMA-co-GMA) interface, as observed by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements. The correlation between the structural properties and the device performance of CuPc films grown on different polymeric gate insulators is discussed. (C) 2007 Elsevier B.V. All rights reserved.