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Indexed by:期刊论文

Date of Publication:2010-06-01

Journal:MATERIALS AND MANUFACTURING PROCESSES

Included Journals:SCIE、EI、Scopus

Volume:25

Issue:6

Page Number:418-423

ISSN No.:1042-6914

Key Words:CdZnTe wafer; Chemical mechanical polishing; Soft-brittle crystal; Ultrarecision grinding

Abstract:Ultraprecision grinding by a #6000 diamond grinding wheel on soft-brittle Cd0.96Zn0.04Te (111) crystals was conducted, and ultrasmooth machined surface was achieved. The ground surface of Cd0.96Zn0.04Te (111) was compared with that of lapping and chemical mechanical polishing (CMP). The experimental results show that the surface roughness, Ra, and machining duration by ultraprecision grinding and CMP are 4.985nm, 1.478nm, and 35min, 135min, respectively, thus ultraprecision grinding exhibits high-efficiency and ultraprecision characters. The ground surface is smooth, uniform, microcrack and imbedding-free, while the machined surface by CMP appears free abrasive imbedding at local micro-area, leading to the decrease of surface integrity.