location: Current position: Home >> Scientific Research >> Paper Publications

Triple cation perovskites-based resistive switching memory with improved stability in both endurance and retention

Hits:

Indexed by:期刊论文

Date of Publication:2021-03-19

Journal:ACS Applied Electronic Materials

Volume:2

Issue:11

Page Number:3695-3703

Pre One:Ga2O3作载流子阻挡层的n-ZnO/p-GaN异质结发光二极管

Next One:Optical transition and luminescence properties of Sm3+-doped YNbO4 powder phosphors