location: Current position: Home >> Scientific Research >> Paper Publications

含InGaN插入层的非故意掺杂高阻GaN的外延生长和特性研究

Hits:

Date of Publication:2015-01-01

Journal:第一届全国宽禁带半导体学术及应用技术会议

Page Number:28-29

Note:新增回溯数据

Pre One:卷积神经网络的FP GA实现及优化

Next One:喷淋头高度对InGaN/GaN量子阱生长的影响