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Date of Publication:2010-01-01

Journal:光电子 激光

Volume:21

Issue:4

Page Number:524-528

ISSN No.:1005-0086

Abstract:The near-infrared (NIR) organic light-emitting diodes (OLEDs) with the
   structure of ITO/ NPB/TPBI:(4-tert)CuPc/BCP/Alq_3/AI are fabricated by
   vacuum thermal evaporation. The emission peak is about 1110 nm at room
   temperature. The emissions are from the first excited triplet state to
   the ground state of (4-tert)CuPc. The optimal doping concentration of
   (4-tert)CuPc in TPBI is 14 wt%. The devices with the structure of
   ITO/NPB/TPBI: (4-tert)CuPc/DCJTB/BCP/Alq_3/Al are also fabricated. The
   results indicate that the insertion of DCJTB does not cause the change
   of the NIR electrolumines cent peak wavelength, while the NIR
   electroluminescence intensity is increased by 50% compared with the
   device without DCJTB, which is due to the energy transfer from DCJTB to
   (4-tert)CuPc.

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