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Indexed by:期刊论文
Date of Publication:2014-10-01
Journal:JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Included Journals:SCIE、EI
Volume:25
Issue:10
Page Number:4268-4272
ISSN No.:0957-4522
Abstract:The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition (MOCVD) was investigated. The property of GaN epilayer was investigated by atomic force microscopy, X-ray diffraction, low-temperature (10 K) photoluminescence and the Raman scattering. It is found that, as the spacing between showerhead and susceptor decreased, the growth rate increased and the tensile stress decreased. This result may be useful to control the stress in GaN thin films grown on silicon carbide substrate by MOCVD.
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