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Indexed by:期刊论文

Date of Publication:2012-01-01

Journal:OPTICAL MATERIALS EXPRESS

Included Journals:Scopus、SCIE、EI

Volume:2

Issue:1

Page Number:38-44

ISSN No.:2159-3930

Abstract:The authors report on the fabrication of p-Mg(0.1)Zn(0.9)O/n-GaN light emitting diodes (LEDs). Under forward bias, dominant ultraviolet (UV) electroluminescence is detected within 360-380 nm caused by near band edge (NBE) radiative recombination from both n-GaN and p-Mg(0.1)Zn(0.9)O. It is worth noting that the intensity ratio of UV-NBE/visible-DLE reaches up to 50, which indicates the potential applications of this structure in the short wavelength LEDs. (C) 2011 Optical Society of America