Release Time:2019-03-09  Hits:

Indexed by: Journal Article

Date of Publication: 2011-11-01

Journal: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Included Journals: PubMed、EI、SCIE、Scopus

Volume: 11

Issue: 11,SI

Page Number: 9741-9744

ISSN: 1533-4880

Key Words: ZnO; Metal-Organic Chemical Vapor Deposition; Photo-Assisted; N-Doped; p-Type

Abstract: Nitrogen-doped ZnO (ZnO:N) films were prepared by photo-assisted metal-organic chemical vapor deposition technique using NH(3) as N doping source. The effects of in-situ light irradiation on the properties of ZnO:N films were studied by Hall measurements, X-ray diffraction, Raman scattering, and X-ray photoelectron spectroscopy. The results show that stable p-type ZnO:N films with a hole concentration of 3.61 x 10(17) cm(-3) was successfully achieved. Moreover, introducing proper in-situ light irradiation during the growth process can not only effectively improve the crystalline quality of ZnO films, but also enhance the activity of (N)(O) (N occupies O site) acceptors by removing the undesirable hydrogen atoms from ZnO:N films. Both effects are benefit for the p-type conductivity formation. Our results indicate that photo-assisted MOCVD maybe an effective technology to realize device-quality p-type ZnO:N films.