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Senior Engineer Supervisor of Master's Candidates

Other Post:微电子实验教学中心主任

Paper Publications

[161]Cheng, Yi, Liang, Hongwei, Liu, Yang, Xia, Xiaochuan, Shen, Rensheng, Song, Shiwei, Wu, Yunfeng, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Influence of N-2 and O-2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu...[J],MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2013,16(5,SI):1303-1307
[162]Song, Shiwei, Liang, Hongwei, Liu, Yang, Xia, Xiaochuan, Zhang, Kexiong, Yang, Dechao, Wang, Dongsheng, Du, Guotong, Shen, Rensheng, RS (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improved quality of GaN epilayer grown on porous SiC substrate by in situ H-2 pre-treatment[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(9):3299-3302
[163]Zhang, Kexiong, Song, Shiwei, Yang, Dechao, Shen, Rensheng, Liu, Yang, Xia, Xiaochuan, Luo, Yingmin, Du, Guotong, Liang, Hongwei, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates[J],JOURNAL OF TESTING AND EVALUATION,2013,41(5):798-803
[164]宋世巍, 梁红伟, 申人升, 柳阳, 张克雄, 夏晓川, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).SiN插入层对GaN外延膜应力和光学质量的影响[J],发光学报,2013,34(8):1017-1021
[165]Song, Shiwei, Liu, Yang, Liang, Hongwei, Yang, Dechao, Zhang, Kexiong, Xia, Xiaochuan, Shen, Rensheng, Du, Guotong, SW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ ...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2923-2927
[166]Yang, Dechao, Liang, Hongwei, Qiu, Yu, Song, Shiwei, Liu, Yang, Shen, Rensheng, Luo, Yingmin, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growt...[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2716-2720
[167]Cheng, Yi, Zhang, Zhenzhong, Liu, Yang, Song, Shiwei, Yuanda, Wang, Bo, Xia, Xiaochuan, Shen, Rensheng, Liang, Hongwei, Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Engn, Dalian 116024, Peoples R China..Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal[J],JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2013,24(8):2750-2754
[168]Cai, Xin, Liang, Hongwei, Liu, Yuanda, Shen, Rensheng, Xia, Xiaochuan, Yang, Ling, C. C., Du, Guotong, HW (reprint author), Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China..Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by...[J],CHEMICAL PHYSICS LETTERS,2013,579:90-93
[169]柯昀洁, 梁红伟, 申人升, 宋世巍, 夏晓川, 柳阳, 张克雄, 杜国同, Liang, H.-W.(hwliang@dlut.edu.cn).喷淋头高度对InGaN/GaN量子阱生长的影响[J],发光学报,2013,34(4):469-473
[170]杨德超, 梁红伟, 邱宇, 俞振南, 杜国同, 宋世巍, 申人升, 柳阳, 夏晓川, Liang, H.-W.(hwliang@dlut.edu.cn).衬底弯曲度对GaN基LED芯片性能的影响[J],发光学报,2013,34(3):340-344

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