Hits:
First Author:Shen Rensheng
Disigner of the Invention:lianghongwei,liuyang,duguotong
Authorization Date:2012-03-02
Authorization number:ZL201210052040.1
Pre One:在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜
Next One:内弧形顶薄壁应变筒投入式光纤Bragg光栅压力传感器