Hits:
First Author:陈远鹏
Disigner of the Invention:xiaxiaochuan,liuyang,Shen Rensheng,lianghongwei,duguotong
Application Number:CN201310399590.5
Authorization Date:2013-09-05
Authorization number:CN103489967A
Pre One:在镓系异质半导体衬底上制备氧化镓膜的方法及氧化镓膜
Next One:掺杂氧化镓膜的制备方法及掺杂氧化镓膜