个人信息Personal Information
高级工程师
硕士生导师
任职 : 微电子实验教学中心主任
性别:男
毕业院校:大连理工大学
学位:博士
所在单位:集成电路学院
学科:微电子学与固体电子学. 光学工程
办公地点:辽宁省大连市大连经济技术开发区图强街321号大连理工大学开发区校区教学楼C区503室
联系方式:0411-62273210
电子邮箱:shjiank@dlut.edu.cn
Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate
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论文类型:期刊论文
发表时间:2016-03-01
发表刊物:JAPANESE JOURNAL OF APPLIED PHYSICS
收录刊物:SCIE、EI、Scopus
卷号:55
期号:3
ISSN号:0021-4922
摘要:Vertically conducting deep-ultraviolet (DUV) light-emitting diodes (LEDs) with a polarization-induced backward-tunneling junction (PIBTJ) were grown by metal-organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. A self-consistent solution of Poisson-Schrodinger equations combined with polarization-induced theory was applied to simulate the PIBTJ structure, energy band diagrams, and free-carrier concentration distribution. AlN and graded AlxGa1-xN interlayers were introduced between the PIBTJ and multiple quantum well layers to avoid cracking of the n-Al0.5Ga0.5N top layer. At a driving current of 20 mA, an intense DUV emission at similar to 288nm and a weak shoulder at similar to 386nm were observed from the AlGaN top layer side. This demonstrates that the PIBTJ can be used to fabricate vertically conducting DUV LED on SiC substrates. (C) 2016 The Japan Society of Applied Physics